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		<doi>10.1134/S1063739715060086</doi>
		<issn>1063-7397</issn>
		<citationkey>TrushinKupYinGraAla:2015:AtMeSt</citationkey>
		<title>Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system</title>
		<year>2015</year>
		<month>Nov.</month>
		<typeofwork>journal article</typeofwork>
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		<author>Trushin, O. S.,</author>
		<author>Kupryanov, A. N.,</author>
		<author>Ying, S. -C.,</author>
		<author>Granato, Enzo,</author>
		<author>Ala-Nissila, T.,</author>
		<group></group>
		<group></group>
		<group></group>
		<group>LAS-CTE-INPE-MCTI-GOV-BR</group>
		<affiliation>Academy of Sciences of Russia</affiliation>
		<affiliation>Academy of Sciences of Russia</affiliation>
		<affiliation>Brown University</affiliation>
		<affiliation>Instituto Nacional de Pesquisas Espaciais (INPE)</affiliation>
		<affiliation>Aalto University School of Science</affiliation>
		<electronicmailaddress></electronicmailaddress>
		<electronicmailaddress></electronicmailaddress>
		<electronicmailaddress></electronicmailaddress>
		<electronicmailaddress>enzo.granato@inpe.br</electronicmailaddress>
		<journal>Russian Microelectronics</journal>
		<volume>44</volume>
		<number>6</number>
		<pages>410-413</pages>
		<transferableflag>1</transferableflag>
		<contenttype>External Contribution</contenttype>
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		<keywords>Activation barriers, Atomic mechanism, Critical thickness, EAM potential, Heteroepitaxial, Molecular statics, Semi-empirical, Strain relief.</keywords>
		<abstract>Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are studied using molecular static methods with semiempirical EAM potentials. In particular, the process of a V-shape defect (internal (111) faceting) nucleation is considered, and the corresponding activation barriers and critical thicknesses are estimated.</abstract>
		<area>FISMAT</area>
		<language>en</language>
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